Smart power transistors for electronic ballasts

Author

Aiello, N. ; La Barbera, A. ; Sueri, S. ; Sukumar, Vajapeyam

Author_Institution

SGS-Thomson Microelectron., Catania, Italy

Volume

1

fYear

1997

fDate

23-27 Feb 1997

Firstpage

179

Abstract

A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages

Keywords

bipolar transistor switches; fluorescent lamps; integrated circuit packaging; lamp accessories; power bipolar transistors; power integrated circuits; power semiconductor switches; MOS emitter switch; TO-220 power switching device; VB348; drive circuitry; electronic ballasts; fluorescent ballast applications; overtemperature protection; parasitic effects; power bipolar transistor; protection features; smart power transistors; switching parameters; vertical power IC process; Bipolar integrated circuits; Bipolar transistors; Design optimization; Electronic ballasts; Fluorescence; Power integrated circuits; Power transistors; Protection; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1997. APEC '97 Conference Proceedings 1997., Twelfth Annual

Conference_Location

Atlanta, GA

Print_ISBN

0-7803-3704-2

Type

conf

DOI

10.1109/APEC.1997.581451

Filename

581451