Title :
A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability
Author :
Ma, Chenyue ; Li, Bo ; Zhang, Lining ; He, Jin ; Zhang, Xing ; Lin, Xinnan ; Chan, Mansun
Author_Institution :
Shenzhen Grad. Sch., Micro- & Nano Electron. Device & Integrated Technol. Group, Peking Univ., Beijing
Abstract :
A unified FinFET reliability model including high K stack dynamic threshold (HKSDT), hot carrier injection (HCI), and negative bias temperature instability (NBTI) has been developed and verified by experimental data. The FinFET-based circuit performances are simulated and compared under these reliability issues by HSPICE simulator after the inclusion of the presented model.
Keywords :
MOSFET; high-k dielectric thin films; hot carriers; semiconductor device models; semiconductor device reliability; FinFET reliability model; FinFET-based circuit performance simulation; HKSDT; NBTI; high K gate stack dynamic threshold voltage; hot carrier injection; negative bias temperature instability; Circuit simulation; FinFETs; High K dielectric materials; High-K gate dielectrics; Hot carrier injection; Human computer interaction; Negative bias temperature instability; Niobium compounds; Threshold voltage; Titanium compounds; HCI; HKSDT; Model; NBTI; Reliability; circuit;
Conference_Titel :
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4244-2952-3
Electronic_ISBN :
978-1-4244-2953-0
DOI :
10.1109/ISQED.2009.4810262
