Transmission line with 2-kV HBM broadband ESD protection using BIMOS and SCR in advanced CMOS technologies

Author

Tekfouy Lim ; Jimenez, Joaquin ; Heitz, B. ; Benech, Ph ; Fournier, Jacques ; Galy, Ph

Author_Institution

STMicroelectron., Crolles, France

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

40

Lastpage

42

Abstract

Advanced CMOS technologies provide an easier way to realize radio-frequency integrated circuits (RFICs). However, transistor gates are getting smaller and electrostatic discharges (ESD) issues become more significant. Unfortunately, ESD protections parasitic capacitance limits the operating bandwidth of the RFICs. ESD protection size dimensions are also an issue to protect RFICs. This paper presents measurements results of ESD protection devices able to be implemented in an I/O pad in advanced CMOS technologies.

Keywords

BIMOS integrated circuits; CMOS integrated circuits; electrostatic discharge; low-power electronics; radiofrequency integrated circuits; thyristors; transmission lines; BIMOS; HBM broadband ESD protection; RFIC; SCR; advanced CMOS technologies; electrostatic discharges; radio-frequency integrated circuits; transistor gates; transmission line; voltage 2 kV; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Electrostatic discharges; Radio frequency; Transistors; Transmission line measurements; Electrostatic discharges (ESD); advanced CMOS technology; integrated; radio-frequency integrated circuit (RFIC); transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421491

Filename

6421491