DocumentCode
3093648
Title
Effect of NDD dosage on hot-carrier reliability in DMOS transistors
Author
Chen, Jone F. ; Tian, Kuen-Shiuan ; Chen, Shiang-Yu ; Wu, Kuo-Ming ; Liu, C.M.
Author_Institution
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
fYear
2009
fDate
16-18 March 2009
Firstpage
226
Lastpage
229
Abstract
The hot-carrier reliability of high-voltage n-channel DMOS transistors with various dosage of n-type double diffusion (NDD) implant is investigated. Higher NDD dosage results in higher substrate current, however, on-resistance (Ron) degradation is lower. TCAD simulation suggests that hot-hole injection and trapping is responsible for this unexpected lower Ron degradation.
Keywords
MOSFET; diffusion; electrical resistivity; hole traps; hot carriers; reliability; technology CAD (electronics); TCAD simulation; high-voltage n-channel DMOS transistors; hot-carrier reliability; hot-hole injection; hot-hole trapping; n-type double diffusion; on-resistance degradation; CMOS integrated circuits; Degradation; Hot carrier effects; Hot carriers; Implants; MOSFETs; Microelectronics; Semiconductor device manufacture; Semiconductor device reliability; Stress; DMOS; hot-carrier; reliability;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2952-3
Electronic_ISBN
978-1-4244-2953-0
Type
conf
DOI
10.1109/ISQED.2009.4810298
Filename
4810298
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