DocumentCode
3094434
Title
Design methodology of high performance on-chip global interconnect using terminated transmission-line
Author
Zhang, Yulei ; Zhang, Ling ; Deutsch, Alina ; Katopis, George A. ; Dreps, Daniel M. ; Buckwalter, James F. ; Kuh, Ernest S. ; Cheng, Chung-Kuan
Author_Institution
ECE Dept., Univ. of California, San Diego, CA
fYear
2009
fDate
16-18 March 2009
Firstpage
451
Lastpage
458
Abstract
We explore two schemes using transmission-line (T-line) to achieve high-performance global interconnects on VLSI chips. For both schemes, we select wire dimensions to ensure T-line effects present and employ inverter chains as drivers and receivers. In order to achieve high throughput and alleviate Inter-Symbol Interference (ISI), high termination resistance is used in the second scheme. For the two schemes, we discuss how to optimize the wire dimensions and the effects of driver impedance and termination resistance on the wire bandwidth. Secondly, design methodology is proposed to determine the optimal design variables for three objectives. We adopt the proposed methodology and compare the performance metrics with repeated RC wires. Simulation results show that, the proposed T-line schemes reduce the delay and improve the throughput as much as 82% and 63%, for min-ddp (delay2-power product) objective.
Keywords
VLSI; electric impedance; integrated circuit design; integrated circuit interconnections; intersymbol interference; transmission lines; T-line effects; VLSI chips; design methodology; driver impedance; high termination resistance; intersymbol interference; on-chip global interconnect; terminated transmission-line; wire bandwidth; wire dimensions; Delay; Design methodology; Impedance; Intersymbol interference; Inverters; Termination of employment; Throughput; Transmission lines; Very large scale integration; Wire; On-chip transmission line; design methodology; global interconnect; termination resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
Conference_Location
San Jose, CA
Print_ISBN
978-1-4244-2952-3
Electronic_ISBN
978-1-4244-2953-0
Type
conf
DOI
10.1109/ISQED.2009.4810337
Filename
4810337
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