Sputter deposition of stress controlled piezoelectric AlN and AlScN films for ultrasonic and energy harvesting applications

Author

Barth, Stephan ; Bartzsch, Hagen ; Gloess, Daniel ; Frach, Peter ; Herzog, Thomas ; Walter, Steffen ; Heuer, Henning

Author_Institution

Fraunhofer Inst. for Electron Beam & Plasma Technol. (FEP), Dresden, Germany

fYear

2013

fDate

21-25 July 2013

Firstpage

1351

Lastpage

1353

Abstract

This paper will report on the deposition and characterization of piezoelectric AlN and Al_xSc_1-xN layers. A special focus is on the characterization regarding the mechanical stress in the films. Potential applications of the films are in ultrasonic microscopy, energy harvesting and SAW/BAW filters. To demonstrate the potential in ultrasonic applications, the pulse echo method was used.

Keywords

III-V semiconductors; aluminium compounds; internal stresses; piezoelectric semiconductors; piezoelectric thin films; scandium compounds; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; Al_XSc_1-XN; AlN; BAW filters; SAW filters; energy harvesting applications; mechanical stress; pulse echo method; sputter deposition; stress controlled piezoelectric films; ultrasonic applications; ultrasonic microscopy; Acoustics; Films; III-V semiconductor materials; Sputtering; Stress; Substrates; X-ray scattering; AlN; AlScN; Sputter Deposition; Stress Control; piezoelectric;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium (IUS), 2013 IEEE International

Conference_Location

Prague

ISSN

1948-5719

Print_ISBN

978-1-4673-5684-8

Type

conf

DOI

10.1109/ULTSYM.2013.0344

Filename

6724945