• DocumentCode
    3094879
  • Title

    Die/wafer stacking with reciprocal design symmetry (RDS) for mask reuse in three-dimensional (3D) integration technology

  • Author

    Alam, Syed M. ; Jones, Robert E. ; Pozder, Scott ; Jain, Ankur

  • Author_Institution
    Everspin Technol., Inc., Austin, TX
  • fYear
    2009
  • fDate
    16-18 March 2009
  • Firstpage
    569
  • Lastpage
    575
  • Abstract
    Each stratum in a 3D chip usually requires a unique mask set which increases the mask cost for a multi-strata chip compared to its 2D counterpart. We present a novel design technique using reciprocal design symmetry (RDS) that allows a mask set (or at least a majority of these) to be used for different strata while still achieving vertical placement and connection of different design functionalities. We demonstrate an application of RDS using a detailed example of a 3D dual-core microprocessor with analyses of various design complexity and testability issues, and a comprehensive simulation and comparison of its thermal characteristics. The coarse grained partitioning of self-contained functional units achieved with RDS is suitable for early adoption of 3D technology as well as for long-term application to low cost system integration due to less redesign effort, design tool requirements, and better testability of each stratum before and after bonding.
  • Keywords
    integrated circuit design; integrated circuit testing; microprocessor chips; thermal management (packaging); wafer level packaging; 3D dual-core microprocessor; coarse grained partitioning; die level stacking; mask reuse; reciprocal design symmetry; self-contained functional units; three-dimensional integration technology; wafer level stacking; Analytical models; Costs; Dielectric substrates; Etching; Integrated circuit interconnections; Microprocessors; Stacking; Testing; Through-silicon vias; Wafer bonding; 3D IC; 3D Integration; Die/Wafer Stacking; Mask Reuse; Reciprocal Design Symmetry;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality of Electronic Design, 2009. ISQED 2009. Quality Electronic Design
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4244-2952-3
  • Electronic_ISBN
    978-1-4244-2953-0
  • Type

    conf

  • DOI
    10.1109/ISQED.2009.4810357
  • Filename
    4810357