Lateral far-field of multiple-stripe high power 1480nm broad-area-lasers for pulsed operation

In this paper we present results about novel multiple stripe broad area lasers that show a significantly narrower optical far-field compared with conventional single stripe lasers. The laser diode consists of an InGaAsP-MQW-structure embedded in a large optical cavity (LOC) waveguide. The well-known LOC design is adopted to decrease the optical confinement of the optical mode in the p-InP cladding layer (low absorption losses) and to increase the size of the optical mode in order to obtain a narrow far-field. The p-doped InP-ridge structure is etched down to the p-side waveguide providing lateral index guiding of the optical mode. The p-contact is Au-electroplated for efficient heat dissipation in upside-down configuration.