Dilute bismides for near and mid-infrared applications

Author

Yuxin Song ; Yi Gu ; Hong Ye ; Peixiong Shi ; Hallen, Anders ; Xiren Chen ; Jun Shao ; Shumin Wang

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenborg, Sweden

fYear

2013

fDate

23-27 June 2013

Firstpage

1

Lastpage

4

Abstract

Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; optical communication; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; GaSbBi; III-V host materials; InGaAsBi; band-gap reduction; dilute bismides; mid-infrared optoelectronics; molecular beam epitaxy; near-infrared optoelectronics; optical communication window; quantum well structures; spin-orbit splitting; thin films; Bismuth; Gallium arsenide; Molecular beam epitaxial growth; Photonic band gap; Substrates; Temperature measurement; GaSbBi; InGaAsBi; InSbBi; MBE; dilute bismide; infrared;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2013 15th International Conference on

Conference_Location

Cartagena

ISSN

2161-2056

Type

conf

DOI

10.1109/ICTON.2013.6602735

Filename

6602735