GaN pHEMT power amplifier for cellular network base station

Author

Dobychina, E. ; Malachov, R. ; Snastin, M.

Author_Institution

Nat. Res. Univ. "Moscow Aviation Inst.", Moscow, Russia

fYear

2013

fDate

23-27 June 2013

Firstpage

1

Lastpage

4

Abstract

Power amplifier (PA) is one of the main parts of digital transceiver of base station of cellular network. Wide bandgap material GaN is one of the most promising technologies in semiconductor devices. In order to develop GaN PA topology is necessary to create the correct nonlinear model of usage transistor and matching circuits. The high accuracy, the multicell power GaN pHEMT model (without optimization usage) was proposed. The calculation precision of matching circuits was achieved by creation of electromagnetic (EM) based models.

Keywords

cellular radio; gallium compounds; optical transceivers; power amplifiers; semiconductor devices; GaN; PA topology; cellular network base station; digital transceiver; electromagnetic based models; matching circuits; multicell power pHEMT model; nonlinear model; pHEMT power amplifier; transistor; Abstracts; Educational institutions; Facsimile; Frequency measurement; Gallium nitride; Optimization; PHEMTs; X-band power amplifier; base station; multicell model; power divider;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2013 15th International Conference on

Conference_Location

Cartagena

ISSN

2161-2056

Type

conf

DOI

10.1109/ICTON.2013.6602739

Filename

6602739