• DocumentCode
    3095281
  • Title

    A broadband Doherty power amplifier without a quarter-wave impedance inverting network

  • Author

    Watanabe, Shigetaka ; Takayama, Yoichiro ; Ishikawa, Ryo ; Honjo, Kazuhiko

  • Author_Institution
    Univ. of Electro-Commun., Chofu, Japan
  • fYear
    2012
  • fDate
    4-7 Dec. 2012
  • Firstpage
    361
  • Lastpage
    363
  • Abstract
    A new Doherty power amplifier topology without a quarter-wave impedance inverting network is proposed. This topology enables the enhancement of amplifier bandwidth and achieves a more compact amplifier size. In order to remove an inverting network, the output matching network of the carrier amplifier is designed to realize high performance both at a low-RF level in the off-state of a peaking amplifier and at the RF saturation level. A 1.9-GHz Doherty amplifier without a quarter-wave impedance inverting network was designed and fabricated using GaN HEMTs. A series-connection-type amplifier using an output-combining balun was realized in a lumped-element circuit configuration. The amplifier achieved a power-added efficiency (PAE) of 51% at an output power of 29 dBm under an 11-dB input back-off from a 34-dBm saturated output power with a power-added efficiency of 59%. A maximum PAE higher than 48% was obtained over a frequency range of 1.67 to 1.97 GHz.
  • Keywords
    III-V semiconductors; gallium compounds; high electron mobility transistors; network topology; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT; amplifier bandwidth; broadband Doherty power amplifier; carrier amplifier; input back-off; low-RF level; lumped-element circuit configuration; output matching network; output-combining balun; peaking amplifier; power-added efficiency; quarter-wave impedance inverting network; saturated output power; series-connection-type amplifier; topology; Gallium nitride; HEMTs; Impedance; Impedance matching; MODFETs; Power amplifiers; Radio frequency; Doherty amplifier; GaN HEMT; Microwave power amplifier; balun; broadband; lumped element circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference Proceedings (APMC), 2012 Asia-Pacific
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4577-1330-9
  • Electronic_ISBN
    978-1-4577-1331-6
  • Type

    conf

  • DOI
    10.1109/APMC.2012.6421598
  • Filename
    6421598