DocumentCode
3095327
Title
AlN and GaN layers deposited on sapphire or silicon substrates: theory and experiment
Author
Pastureaud, Th ; Soufyane, A. ; Camou, S. ; Ballandras, S. ; Schenck, D. ; Semond, F. ; Desbois, J. ; Laude, V.
Author_Institution
LPMO/CNRS, Besancon, France
Volume
1
fYear
2000
fDate
36800
Firstpage
293
Abstract
As the operating frequencies of telecommunication systems increase, surface acoustic wave (SAW) devices would benefit from the propagation on “high velocity” substrates such as sapphire or (100) silicon. However, the excitation of SAW on such materials requires additional piezoelectric layers, such as AlN or GaN, deposited atop their surface. This paper reports on first theoretical and experimental results with such material combinations
Keywords
aluminium compounds; gallium compounds; piezoelectric thin films; surface acoustic wave devices; Al2O3; AlN; AlN layer; GaN; GaN layer; SAW propagation velocity; Si; piezoelectric layer; sapphire substrate; silicon substrate; surface acoustic wave device; telecommunication system; Acoustic propagation; Acoustic waves; Frequency; Gallium nitride; Green´s function methods; Piezoelectric materials; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 2000 IEEE
Conference_Location
San Juan
ISSN
1051-0117
Print_ISBN
0-7803-6365-5
Type
conf
DOI
10.1109/ULTSYM.2000.922559
Filename
922559
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