A linear supply modulator with high dynamic range for polar transmitters in LTE application

Author

Junqing Guan ; Negra, Renato

Author_Institution

UMIC Res. Centre, RWTH Aachen Univ., Aachen, Germany

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

394

Lastpage

396

Abstract

The paper presents an implementation of a linear supply modulator with high dynamic range and bandwidth in polar transmitter for LTE applications. The design starts with the analysis of specification requirements for LTE standard signals. Based upon this, a linear supply modulator with power amplifier is designed and implemented in 130 nm technology, achieving a dynamic range of 23 dB and an average efficiency of 18.0 % at 6 dB back-off power. The performance is also verified by using 5 MHz LTE modulated signals without any predistortion techniques. Simulation results show an average EVM of 3.0 % and more than 10 dB margin to spectrum emission mask.

Keywords

CMOS integrated circuits; Long Term Evolution; modulators; power amplifiers; radio transmitters; LTE application; LTE modulated signals; LTE standard signals; frequency 5 MHz; high dynamic range; linear supply modulator; polar transmitters; power amplifier; size 130 nm; spectrum emission mask; Bandwidth; CMOS integrated circuits; Dynamic range; Linearity; Modulation; Regulators; Transmitters; LDO; LTE; Linear Supply Modulator; Polar Transmitter; Switching-Mode Power Amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421609

Filename

6421609