Linearity and noise of InGaAs multi-quantum-well lasers

Author

Westbrook, L.D. ; Fletcher, N. ; Cooper, D.M. ; Stevenson, M. ; Aylett, M.

Author_Institution

British Telecom Res. Lab., Ipswich, UK

fYear

1990

fDate

23-25 July 1990

Firstpage

62

Lastpage

63

Abstract

Measurements are presented which demonstrate that multiple-quantum-well (MQW) lasers can offer significantly lower noise and distortion levels than equivalent double-heterostructure lasers. Improvements of approximately=10 dB in the laser intensity noise and approximately=8 dB in the second-harmonic distortion have been achieved. These figures are close to the predicted improvement of approximately=12 dB expected in MQW lasers as a result of doubling the laser resonant frequency.<>

Keywords

III-V semiconductors; electron device noise; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductor; InGaAs multi-quantum-well lasers; MQW lasers; distortion levels; laser intensity noise; laser resonant frequency doubling; linearity; noise; second-harmonic distortion; Indium gallium arsenide; Laser noise; Linearity; Optical noise; Power lasers; Quantum well devices; Quantum well lasers; Resonance; Resonant frequency; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Broadband Analog Optoelectronics: Devices and Systems, 1990. Conference Digest., LEOS Summer Topical on

Conference_Location

Monterey, CA, USA

Type

conf

DOI

10.1109/BAODS.1990.205516

Filename

205516