• DocumentCode
    3095842
  • Title

    3rd type of FBARs?

  • Author

    Plessky, V. ; Grigorievsky, Valery ; Ballandras, S. ; Yantchev, Ventsislav

  • Author_Institution
    GVR Trade SA, Gorgier, Switzerland
  • fYear
    2013
  • fDate
    21-25 July 2013
  • Firstpage
    239
  • Lastpage
    242
  • Abstract
    Different "layered structures" were proposed in the past combining the advantageous features of substrates (e.g. low SAW attenuation in sapphire) and high quality of piezoelectric (e.g. AlN) films for the development of acoustic wave guides. Unfortunately, the achievable electromechanical coupling constant K2 is in most cases very small. Meanwhile in FBARs AlN films excited in thickness mode demonstrated K2 > 6%. We propose here a transducer structure comprising: 1) a substrate suitable for propagation of surface acoustic waves in the X-direction with low loss, 2) a metal layer deposited on said substrate and 3) micro-acoustic transducers (resonators) created in the form of piezoelectric (AlN, ZnO, etc.) bars or ridges with cross-section dimension in X-direction smaller than a half wavelength of any acoustic wave in the substrate material at operation frequencies and having top conducting electrodes. The thickness of the piezoelectric layer is close to λp/4 or λp/2 of the bulk wave excited in said transducers/resonators. Said transducers being placed periodically and separated (centre-to-centre) by a distance in the X-direction smaller than 1/2 wavelength of any acoustic wave in the substrate material are connected to the balanced source of voltage +/- V/2. We have simulated both cases. The principal results are that the resonator grating always provides larger coupling factors than the solid layer one, and that a mode can occur exhibiting a coupling of at least 4.2% depending on the layer thickness. In this mode the resonances in narrow FBARs are coupled through the substrate. Actually a new type of FBAR is described, wherein the isolation from the substrate is provided by destructive interference of the radiated bulk waves because of the resonators periodicity <; λBulk/2. The coupling can be easily adjusted. The mode we see may be treated as not a SAW, but as a vibration in a s- stem of coupled FBARs.
  • Keywords
    acoustic resonance; acoustic resonators; acoustic transducers; acoustic wave absorption; bars; bulk acoustic wave devices; piezoelectric thin films; surface acoustic waves; vibrations; SAW attenuation; conducting electrodes; electromechanical coupling constant; microacoustic resonators; microacoustic transducers; piezoelectric bars; piezoelectric films; piezoelectric ridges; resonances; sapphire; surface acoustic wave propagation; vibration; Couplings; Electrodes; Film bulk acoustic resonators; III-V semiconductor materials; Silicon; Substrates; Surface acoustic waves; AlN; FBARs; SAW; coupling; resonator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium (IUS), 2013 IEEE International
  • Conference_Location
    Prague
  • ISSN
    1948-5719
  • Print_ISBN
    978-1-4673-5684-8
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2013.0062
  • Filename
    6725002