• DocumentCode
    3095857
  • Title

    Mechanisms and kinetics of the Catastrophic Optical Damage (COD) of high-power semiconductor lasers

  • Author

    Tomm, Jens W. ; Hempel, Martin ; Krakowski, Michel ; Elsaesser, Thomas

  • Author_Institution
    Max-Born-Inst., Berlin, Germany
  • fYear
    2012
  • fDate
    9-11 July 2012
  • Firstpage
    51
  • Lastpage
    52
  • Abstract
    Mechanisms relevant for the COD in GaAs-based diode lasers are reviewed. Experiments, where COD is artificially provoked, represent a main topic. The sequence of events and the kinetics down to a nanosecond timescale are addressed.
  • Keywords
    III-V semiconductors; gallium arsenide; laser beam effects; semiconductor lasers; GaAs; catastrophic optical damage kinetics; catastrophic optical damage mechanism; high power semiconductor lasers; Degradation; Diode lasers; Kinetic theory; Optical imaging; Optical pulses; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics Society Summer Topical Meeting Series, 2012 IEEE
  • Conference_Location
    Seattle, WA
  • Print_ISBN
    978-1-4577-1526-6
  • Type

    conf

  • DOI
    10.1109/PHOSST.2012.6280781
  • Filename
    6280781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3095857