SAW characteristics of AlN films deposited on various substrates using ECR plasma enhanced CVD and reactive RF sputtering

Author

Soh, Ju-Won ; Lee, Won-Jong ; Park, Jang-Ho ; Lee, Soong-Won

Author_Institution

Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea

Volume

1

fYear

1996

fDate

3-6 Nov 1996

Firstpage

299

Abstract

Highly c-axis oriented AlN films were deposited on SiO₂/Si, Si₃N₄/Si, Si(100) and Si(111) substrates using ECR plasma enhanced CVD (ECR PECVD) and reactive RF sputtering. The AlN films deposited by ECR PECVD had lower surface roughness and lower insertion loss than the sputter-deposited films. ECR PECVD film showed phase velocity of 3270 m/s, whereas sputter-deposited film showed phase velocity of 5100 m/s. The contents of impurities (especially oxygen) was thought to play an important role in the degree of c-axis orientation and SAW velocity

Keywords

acoustic materials; aluminium compounds; piezoelectric thin films; plasma CVD coatings; sputtered coatings; surface acoustic waves; AlN; AlN film; ECR plasma enhanced CVD; SAW phase velocity; Si; Si(100) substrate; Si(111) substrate; Si₃N₄-Si; Si₃N₄/Si substrate; SiO₂-Si; SiO₂/Si substrate; c-axis orientation; impurities; insertion loss; reactive RF sputtering; surface roughness; Impurities; Insertion loss; Plasma properties; Radio frequency; Rough surfaces; Semiconductor films; Sputtering; Substrates; Surface acoustic waves; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE

Conference_Location

San Antonio, TX

ISSN

1051-0117

Print_ISBN

0-7803-3615-1

Type

conf

DOI

10.1109/ULTSYM.1996.583978

Filename

583978