DocumentCode
309609
Title
Shock sensors using direct bonding of LiNbO3 crystals
Author
Ohtsuchi, T. ; Sugimoto, M. ; Ogura, T. ; Tomita, Y. ; Kawasaki, O. ; Eda, K.
Author_Institution
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Volume
1
fYear
1996
fDate
3-6 Nov 1996
Firstpage
331
Abstract
We have developed a shock sensor made with a bimorph type cantilever using by a technique of directly bonding piezoelectric single crystals. The cantilever´s polarization-inverted structure was achieved by directly bonding LiNbO3 single-crystal wafers having reverse polarization. This technique did not require any bonding agent. The basic characteristics of the shock sensor were evaluated. The resonance frequency of the cantilever having a length of 2 mm was 20 kHz. The sensor made from 140° rotated Y cut LiNbO3 wafers had a high sensitivity of 6.4 mV/G, and excellent linearity
Keywords
dielectric polarisation; lithium compounds; piezoelectric transducers; shock measurement; shock waves; wafer bonding; 2 mm; 20 kHz; LiNbO3; bimorph type cantilever; direct bonding; linearity; piezoelectric single crystal; polarization inversion; resonance frequency; reverse polarization; rotated Y cut LiNbO3 wafer; sensitivity; shock sensor; Crystals; Electric shock; Ferroelectric materials; Mechanical sensors; Piezoelectric actuators; Piezoelectric polarization; Resonance; Resonant frequency; Sensor phenomena and characterization; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1996. Proceedings., 1996 IEEE
Conference_Location
San Antonio, TX
ISSN
1051-0117
Print_ISBN
0-7803-3615-1
Type
conf
DOI
10.1109/ULTSYM.1996.583985
Filename
583985
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