A 2.4 GHz CMOS power amplifier using asymmetric MOSFETs

In this paper, a two-stage 2.4 GHz power amplifier (PA) using the high-breakdown-voltage asymmetric NMOSFETs was implemented in a 0.18-μm CMOS technology. In this process, the conventional NMOSFETs have a drain-to-source breakdown voltage (BV_dss) about 3.5V, therefore restricting the available output power in PA designs. However, by using the special asymmetric NMOSFETs in the proposed PA, the circuit can safely operate at a supply voltage from 1.8 to 2.75V. Under a 2.75V operation, good power performances include a power gain of 20.4 dB, an output 1-dB compression point (P_{out, 1dB}) of 21.5dBm and a power-added-efficiency (PAE) of 29.6%.