DocumentCode
3096993
Title
Carrier accumulation in the optical confinement layer, its effect on power limit in high power and brightness laser diodes, and laser design to overcome this limitation
Author
Avrutin, Eugene ; Ryvkin, Boris
Author_Institution
Dept. of Electron., Univ. of York, York, UK
fYear
2012
fDate
9-11 July 2012
Firstpage
53
Lastpage
54
Abstract
We analyse efficiency degradation due to carrier accumulation in the optical confinement layer of high-power laser diodes. Narrow asymmetric waveguide structures are shown to reduce this limitation while enabling low built-in losses and fundamental-mode operation.
Keywords
optical losses; optical waveguides; semiconductor lasers; asymmetric waveguide structures; brightness laser diodes; built-in losses; carrier accumulation; efficiency degradation; fundamental-mode operation; high power laser diodes; optical confinement layer; Charge carrier density; Charge carrier processes; Laser theory; Optical saturation; Optical waveguides; Power generation; Waveguide lasers; High-power lasers; asymmetric structures; efficiency; far field; modelling;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2012 IEEE
Conference_Location
Seattle, WA
Print_ISBN
978-1-4577-1526-6
Type
conf
DOI
10.1109/PHOSST.2012.6280868
Filename
6280868
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