• DocumentCode
    3097028
  • Title

    Temperature influence mechanism of micromechanical silicon oscillating accelerometer

  • Author

    Dong Jin-hu ; Qiu An-ping ; Shi Ran

  • Author_Institution
    MEMS Inertial Technol. Res. Center, Nanjing Univ. of Sci. & Technol., Nanjing, China
  • Volume
    3
  • fYear
    2011
  • fDate
    8-9 Sept. 2011
  • Firstpage
    385
  • Lastpage
    389
  • Abstract
    Bias value and scale factor (SF) are two main performance indexes of silicon oscillating accelerometer(SOA). A deep research on that how temperature influence the performance of SOA by changing the effective stiffness of resonators, is made so as to reduce the temperature sensitivity of it in this paper. There is a wide difference between testing and theoretic parameters of bias value and SF through temperature experiment on SOA, both of which have obvious temperature sensitivity. Then the influence mechanism of Young modulus and bond stress is deduced theoretically and simulated. The temperature sensitivity of resonant frequency caused by Young modulus and bond stress are -1Hz/°C and 178Hz/°C respectively. How the bond stress comes up during processing is described and its connection with the stress of resonator is discussed. Seeing that the stress of resonator is the main factor which causes temperature sensitivity of SOA, some isolation beams used to isolate the residual stress are designed. In addition, A novel temperature compensation measure based on electrostatic stiffness is proposed, which points out the direction of accurate compensation.
  • Keywords
    Young´s modulus; accelerometers; elemental semiconductors; internal stresses; micromechanical devices; silicon; Si; Young modulus; bond stress; electrostatic stiffness; micromechanical silicon oscillating accelerometer; residual stress; resonant frequency; resonator stress; temperature influence mechanism; Resonant frequency; Semiconductor optical amplifiers; Silicon; Stress; Temperature; Temperature measurement; Temperature sensors; bond stress; electrostatic stiffness; isolation beams; silicon oscillating accelerometer; temperature influence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Engineering and Automation Conference (PEAM), 2011 IEEE
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-9691-4
  • Type

    conf

  • DOI
    10.1109/PEAM.2011.6135118
  • Filename
    6135118