DocumentCode :
309727
Title :
A short gate length pseudomorphic HEMT process for mm wave applications
Author :
Colquhoun, Alex
Author_Institution :
United Monolithic Semicond., Ulm, Germany
Volume :
2
fYear :
1996
fDate :
13-16 Oct 1996
Firstpage :
756
Abstract :
A number of important applications including radar warning sensors for automobiles and communication between the base stations of mobile telephone networks use or will use millimeter wave frequencies. This work, carried out in ESPRIT project 6016 “CLASSIC”, has established a technological basis for the mass production of semiconductor components for cheap transmit and receive modules operating at millimeter wave frequencies. The high frequency part of the equipment is the cost determining factor. In the project, a transistor technology has been developed so that the major part of the millimeter wave section of the equipment can be integrated onto one semiconductor chip
Keywords :
high electron mobility transistors; millimetre wave field effect transistors; semiconductor technology; CLASSIC; ESPRIT project 6016; MM wave applications; automobile radar warning sensor; base station communication; mass production; mobile telephone network; receive module; semiconductor chip; short gate length pseudomorphic HEMT process; transistor technology; transmit module; Automobiles; Base stations; Frequency; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Mobile communication; PHEMTs; Radar applications;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics, Circuits, and Systems, 1996. ICECS '96., Proceedings of the Third IEEE International Conference on
Conference_Location :
Rodos
Print_ISBN :
0-7803-3650-X
Type :
conf
DOI :
10.1109/ICECS.1996.584472
Filename :
584472
Link To Document :
بازگشت