DocumentCode :
3097294
Title :
An investigation of ZGNR-based transistors
Author :
Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, Rahim ; Kosina, Hans
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs) are semiconductors and their band-gap is inversely proportional to their width [2]. Therefore, narrow AGNRs have been recently suggested as a material for transistor channels. However, line edge roughness and substrate impurities can significantly degrade the ballistic transport in AGNRs, especially in narrow ribbons [3].
Keywords :
ballistic transport; field effect transistors; graphene; nanoelectronics; nanostructured materials; ZGNR-based transistors; armchair GNR; ballistic transport; carrier transport; line edge roughness; nanoelectronics; substrate impurities; transistor channels; zigzag graphene nanoribbons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135136
Filename :
6135136
Link To Document :
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