• DocumentCode
    3097294
  • Title

    An investigation of ZGNR-based transistors

  • Author

    Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, Rahim ; Kosina, Hans

  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs) are semiconductors and their band-gap is inversely proportional to their width [2]. Therefore, narrow AGNRs have been recently suggested as a material for transistor channels. However, line edge roughness and substrate impurities can significantly degrade the ballistic transport in AGNRs, especially in narrow ribbons [3].
  • Keywords
    ballistic transport; field effect transistors; graphene; nanoelectronics; nanostructured materials; ZGNR-based transistors; armchair GNR; ballistic transport; carrier transport; line edge roughness; nanoelectronics; substrate impurities; transistor channels; zigzag graphene nanoribbons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135136
  • Filename
    6135136