DocumentCode
3097294
Title
An investigation of ZGNR-based transistors
Author
Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, Rahim ; Kosina, Hans
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
Graphene, a recently discovered form of carbon, has received much attention for possible applications in nanoelectronics, due to its excellent carrier transport properties [1]. Graphene nanoribbons (GNRs) are thin strips of graphene, where the electronic properties depend on the chirality of the edge and the width of the ribbon. Zigzag GNRs (ZGNRs) show metalic behavior, whereas armchair GNRs (AGNRs) are semiconductors and their band-gap is inversely proportional to their width [2]. Therefore, narrow AGNRs have been recently suggested as a material for transistor channels. However, line edge roughness and substrate impurities can significantly degrade the ballistic transport in AGNRs, especially in narrow ribbons [3].
Keywords
ballistic transport; field effect transistors; graphene; nanoelectronics; nanostructured materials; ZGNR-based transistors; armchair GNR; ballistic transport; carrier transport; line edge roughness; nanoelectronics; substrate impurities; transistor channels; zigzag graphene nanoribbons;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135136
Filename
6135136
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