DocumentCode
3097347
Title
300 GHz six-stage differential-mode amplifier
Author
Park, Hyung Jo ; Rieh, J.S. ; Kim, Marn-Go ; Hacker, J.B.
Author_Institution
Korea University, Seoul, Republic of Korea
fYear
2010
fDate
23-28 May 2010
Firstpage
1
Lastpage
1
Abstract
A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each using a differential-pair of common-base DHBTs. A total of six signal lines provide connection to the unit cell to obtain the differential-mode amplifier gain while providing proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz. This design technique could be extremely powerful in generating high terahertz amplifier gain.
Keywords
Bipolar transistors; Differential amplifiers; Gain measurement; High power amplifiers; Indium phosphide; NASA; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location
Anaheim, CA
ISSN
0149-645X
Print_ISBN
978-1-4244-6056-4
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2010.5515328
Filename
5515328
Link To Document