Title :
300 GHz six-stage differential-mode amplifier
Author :
Park, Hyung Jo ; Rieh, J.S. ; Kim, Marn-Go ; Hacker, J.B.
Author_Institution :
Korea University, Seoul, Republic of Korea
Abstract :
A 300 GHz amplifier is fabricated using indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The cascade chain in the amplifier contains six unit cells each using a differential-pair of common-base DHBTs. A total of six signal lines provide connection to the unit cell to obtain the differential-mode amplifier gain while providing proper dc bias. Measured results show the peak gain of 17.3 dB at 290 GHz with 10-dB gain-bandwidth of 20 GHz. This design technique could be extremely powerful in generating high terahertz amplifier gain.
Keywords :
Bipolar transistors; Differential amplifiers; Gain measurement; High power amplifiers; Indium phosphide; NASA; Power generation;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5515328
