Device modeling analysis and simulation of SiC P-i-N diode under pulsed power conditions

Author

Ogunniyi, Aderinto ; O´Brien, Heather ; Scozzie, Charles ; Shaheen, W. ; Zhang, Juyong ; Lin Cheng ; Agarwal, Abhishek ; Temple, Victor

Author_Institution

US Army Res. Lab., Adelphi, MD, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

Silicon carbide (SiC) material properties make it well suited for pulsed power applications. SiC has a higher electric field breakdown, allowing for thinner, more compact high voltage devices. Silicon carbide also has a much shorter minority carrier lifetime which equates to much faster recovery time; it also has good thermal conductivity equating to minimum cooling requirements for a pulsed system and a high Young´s modulus enabling SiC to withstand high current and voltage pulse stresses [1].

Keywords

Young´s modulus; carrier lifetime; p-i-n diodes; semiconductor device models; silicon compounds; thermal conductivity; SiC; Young modulus; device modeling analysis; electric field breakdown; minority carrier lifetime; p-i-n diode; pulsed power conditions; recovery time; thermal conductivity; Integrated circuit modeling; Numerical models; P-i-n diodes; PIN photodiodes; Semiconductor process modeling; Silicon carbide; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135141

Filename

6135141