Practice on layout-level radiation hardened technologies for I/O cells

Author

Wang Jing ; Zuocheng, Xing ; Ping, Huang ; Tianran, Wang ; Guitao, Fu

Author_Institution

Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China

Volume

1

fYear

2010

fDate

18-19 Oct. 2010

Abstract

Radiation hardened technologies are important to improve the anti-radiation performance of ICs. In this paper, several I/O cells in 0.18μm CMOS process are designed and radiation hardening technologies through layout design are researched. The function, timing and the effect of the ESD protection scheme for the I/O cells are analyzed by HSPICE simulation. The way of layout-level radiation hardening consists of single event effect and total ionizing dose effect. TCAD simulation is used to analyze the validity of the technologies adopted in the paper, and the experimental results indicate that the single event latch-up threshold increases effectively, and the anti-radiation performance is improved.

Keywords

CMOS integrated circuits; SPICE; electrostatic discharge; integrated circuit layout; radiation hardening (electronics); semiconductor device models; semiconductor process modelling; technology CAD (electronics); timing circuits; CMOS process; ESD protection; HSPICE simulation; I/O cells; TCAD simulation; antiradiation performance; circuit timing; input-output circuits; layout design; layout-level radiation hardened technology; radiation hardening technology; single event effect; single event latch-up threshold; size 0.18 mum; total ionizing dose effect; CMOS integrated circuits; Heating; Integrated circuit modeling; Petroleum; Radiation hardening; Semiconductor device modeling; Silicon; ESD; I/O cells; Radiation Hardened; Single Event Effect; Single Event Latch-up; TCAD; Total Ionizing Dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Information Networking and Automation (ICINA), 2010 International Conference on

Conference_Location

Kunming

Print_ISBN

978-1-4244-8104-0

Electronic_ISBN

978-1-4244-8106-4

Type

conf

DOI

10.1109/ICINA.2010.5636369

Filename

5636369