• DocumentCode
    3097460
  • Title

    Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires

  • Author

    Redwing, Joan M. ; Ke, Yue ; Wang, Xin ; Eichfeld, Chad ; Weng, Xiaojun ; Kendrick, Chito E. ; Mohney, Suzanne E. ; Mayer, Theresa S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at ~577°C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O2 and H2O, which results in the formation of a surface oxide layer that impedes nanowire growth.
  • Keywords
    catalysis; elemental semiconductors; nanofabrication; nanowires; semiconductor growth; silicon; Si; electrical properties; liquid eutectic phase; metal catalysts; minority carrier transport; nanowires; p-type doping; vapor-liquid-solid growth; Educational institutions; Gold; Junctions; Nanowires; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135144
  • Filename
    6135144