DocumentCode
3097460
Title
Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires
Author
Redwing, Joan M. ; Ke, Yue ; Wang, Xin ; Eichfeld, Chad ; Weng, Xiaojun ; Kendrick, Chito E. ; Mohney, Suzanne E. ; Mayer, Theresa S.
Author_Institution
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
1
Abstract
Alternative metal catalysts are of interest for the vapor-liquid-solid (VLS) growth of silicon nanowires (Si NWs) both from a fundamental growth perspective and as a pathway to control the electrical properties. Gold is the most commonly used metal catalyst, however, gold forms deep level electronic states within the bandgap of Si that are undesirable, particularly for photovoltaic devices that are dependent on minority carrier transport. Aluminum is of particular interest since it forms a liquid eutectic phase with Si at ~577°C and can serve as both a catalyst for nanowire growth and a source for p-type doping. However, Si NWs synthesis using Al is challenging due to the reactivity of Al with ambient O2 and H2O, which results in the formation of a surface oxide layer that impedes nanowire growth.
Keywords
catalysis; elemental semiconductors; nanofabrication; nanowires; semiconductor growth; silicon; Si; electrical properties; liquid eutectic phase; metal catalysts; minority carrier transport; nanowires; p-type doping; vapor-liquid-solid growth; Educational institutions; Gold; Junctions; Nanowires; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135144
Filename
6135144
Link To Document