Analysis and design of a fully integrated, linear dual band LNA for WLAN and Wi-MAX application

Author

Bhattacharya, Rupen ; Gupta, Rajesh ; Basu, Anirban ; Koul, S.K.

Author_Institution

Centre for Appl. Res. in Electron., Indian Inst. of Technol., Delhi, Delhi, India

fYear

2012

fDate

4-7 Dec. 2012

Firstpage

759

Lastpage

761

Abstract

This work reports development of a fully integrated dual band low noise amplifier(LNA) in 0.18 μm CMOS at 2.8/3.4GHz for WLAN and Wi-MAX applications. Dual-band operation is achieved by switching one capacitor each in input and output matching networks. Measured results show a gain of 5 dB/7 dB at 2.8GHz/3.4GHz. Key features of the LNA are: high IIP3 >; +1.5dBm (in both bands) while consuming 5.7mA from a 1.8V supply, a single control input and active area of 0.16mm². An analytical expression for voltage gain has also been derived and verified in both bands.

Keywords

CMOS integrated circuits; WiMax; low noise amplifiers; wireless LAN; CMOS; WLAN; Wi-MAX; active area; current 5.7 mA; input matching networks; integrated dual band low noise amplifier; linear dual band LNA; output matching networks; voltage 1.8 V; voltage gain; CMOS integrated circuits; Capacitance; Capacitors; Dual band; Impedance matching; Linearity; Switches; CMOS RF; Cascode amplifier; Dual Band; Low Noise Amplifier; Low Power;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings (APMC), 2012 Asia-Pacific

Conference_Location

Kaohsiung

Print_ISBN

978-1-4577-1330-9

Electronic_ISBN

978-1-4577-1331-6

Type

conf

DOI

10.1109/APMC.2012.6421726

Filename

6421726