Comparative study of E- and D-mode InAlN/AlN/GaN HEMTs with fT near 200 GHz

Author

Sensale-Rodriguez, Berardi ; Jia Guo ; Ronghua Wang ; Guowang Li ; Tian Fang ; Saunier, P. ; Ketterson, A. ; Schuette, M. ; Xiang Gao ; Shiping Guo ; Yu Cao ; Laboutin, O. ; Johnson, Wayne ; Snider, G. ; Fay, Patrick ; Jena, D. ; Huili Xing

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

We report on the 172/180 GHz (f_T/f_max) E-mode InAlN/AlN/GaN HEMTs with a recess etched gate footprint of 33 nm. To develop further scaling strategies, comparative studies were carried out on E and D-mode HEMTs with f_T near 200 GHz at both room (RT) and cryogenic temperatures (LT). Delay component analysis indicates that the speed of the E-mode device is dominated by parasitic delays, and that the electron velocity in the E-mode is about 2/3 of that in D-mode, most likely steming from mobility degradation during gate recess etch.

Keywords

III-V semiconductors; aluminium compounds; cryogenic electronics; delays; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; wide band gap semiconductors; D-mode HEMT; E-mode HEMT device; InAlN-AlN-GaN; cryogenic temperatures; delay component analysis; electron velocity; frequency 172 GHz; frequency 180 GHz; mobility degradation; parasitic delays; recess etched gate footprint; size 33 nm; temperature 293 K to 298 K; Delay; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; USA Councils;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135164

Filename

6135164