DocumentCode
3098007
Title
Silicon nanowire-based oscillator achieved through solid-liquid phase switching
Author
Cywar, Adam ; Bakan, Gokhan ; Gokirmak, Ali ; Silva, Helena
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
fYear
2011
fDate
7-9 Dec. 2011
Firstpage
1
Lastpage
2
Abstract
We have observed rapid solid-liquid phase-change oscillations in nanocrystalline silicon (nc-Si) microwires while investigating crystal growth from melt at micrometer scale through rapid self-heating. High amplitude oscillations in current through a single Si micro-/nanostructure are achieved as a result of an applied DC bias due to the difference in conductivity between crystalline and liquid phases of Si. We have observed experimental oscillation frequencies on the order of 1-10 MHz thus far. Here we demonstrate the scalability of this device concept by using finite element simulations and varying device size, capacitance, load resistance, and supply voltage.
Keywords
crystal growth from melt; crystal microstructure; elemental semiconductors; finite element analysis; nanowires; oscillators; reliability; silicon; Si; crystal growth from melt; finite element simulations; frequency 1 MHz to 10 MHz; high amplitude oscillations; load resistance; nanocrystalline silicon microwires; rapid self-heating; silicon nanowire-based oscillator; single silicon micronanostructure; solid-liquid phase switching; solid-liquid phase-change oscillations; Capacitance; Conductivity; Integrated circuit modeling; Oscillators; Resistance heating; Silicon; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location
College Park, MD
Print_ISBN
978-1-4577-1755-0
Type
conf
DOI
10.1109/ISDRS.2011.6135170
Filename
6135170
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