• DocumentCode
    3098007
  • Title

    Silicon nanowire-based oscillator achieved through solid-liquid phase switching

  • Author

    Cywar, Adam ; Bakan, Gokhan ; Gokirmak, Ali ; Silva, Helena

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We have observed rapid solid-liquid phase-change oscillations in nanocrystalline silicon (nc-Si) microwires while investigating crystal growth from melt at micrometer scale through rapid self-heating. High amplitude oscillations in current through a single Si micro-/nanostructure are achieved as a result of an applied DC bias due to the difference in conductivity between crystalline and liquid phases of Si. We have observed experimental oscillation frequencies on the order of 1-10 MHz thus far. Here we demonstrate the scalability of this device concept by using finite element simulations and varying device size, capacitance, load resistance, and supply voltage.
  • Keywords
    crystal growth from melt; crystal microstructure; elemental semiconductors; finite element analysis; nanowires; oscillators; reliability; silicon; Si; crystal growth from melt; finite element simulations; frequency 1 MHz to 10 MHz; high amplitude oscillations; load resistance; nanocrystalline silicon microwires; rapid self-heating; silicon nanowire-based oscillator; single silicon micronanostructure; solid-liquid phase switching; solid-liquid phase-change oscillations; Capacitance; Conductivity; Integrated circuit modeling; Oscillators; Resistance heating; Silicon; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135170
  • Filename
    6135170