• DocumentCode
    309803
  • Title

    Replacing silicon monitors with in situ particle monitoring in the GSD200 ion implanter

  • Author

    Malenfant, Joe ; Sedgewick, Judith E. ; Burghard, Ray

  • Author_Institution
    Microelectron. Div., IBM Corp., Essex Junction, VT, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    162
  • Lastpage
    165
  • Abstract
    Silicon monitor wafers are typically used to evaluate the cleanliness of an ion implanter in a production environment. Surface detection methods count particles on these wafers prior to processing. The same surface detection methods are used after implantation on the monitor, with the difference between the two measurements determining the cleanliness of the implant tool. This process may occur several times a day. Special monitor wafers and machine time are required to perform this technique, which provides only a snapshot of the machine´s particulate performance. It may also, on occasion, yield incorrect results that can lead to unnecessary intervention. In-situ particle monitoring, on the other hand, allows real time particle detection without machine downtime, costly monitor wafers and the incorrect data usually associated with surface detection techniques. The High Yield Technology Model 20SX in-situ particle monitor was integrated into the Eaten GSD200 ion implanter and used at the IBM Microelectronics Division semiconductor manufacturing facility in Essex Junction, Vermont, to replace monitor wafers. The paper will discuss the integration of the 20SX sensor into the GSD200 and the characterization work that led to the elimination of silicon monitors
  • Keywords
    elemental semiconductors; ion implantation; monitoring; silicon; surface contamination; Eaten GSD200 ion implanter; High Yield Technology Model 20SX sensor; Si; cleanliness; in situ particle monitoring; real time particle detection; semiconductor manufacturing; silicon wafer surface; Atmospheric modeling; Condition monitoring; Control systems; Implants; Microelectronics; Production facilities; Radiation detectors; Semiconductor device modeling; Sensor phenomena and characterization; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586168
  • Filename
    586168