DocumentCode :
309810
Title :
Production proven electrostatic platen for medium current implantation
Author :
Frutiger, W. ; Eddy, R. ; Brown, D.A. ; Mack, M.E.
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
346
Lastpage :
349
Abstract :
Electrostatic wafer platens (ESPs) for ion implant systems offer enormous benefits in manufacturing productivity. This paper describes and compares the performance of the standard clamp in current use in more than 50 user sites with a new cooled platen design. As would be expected the ESP platens do not affect dosing, charging, or front side particulates. Device damage from the ESP is not an issue because of the safe AC operating mode. Cooling performance of 1 watt/cm2 for 200 mm wafers using nitrogen as the cooling gas has been obtained. Tests indicate that backside particles are dependent on the surface smoothness of the platen and the smoothness of the back side of the wafer being clamped
Keywords :
electrostatic devices; ion implantation; 200 mm; backside particles; electrostatic platen; manufacturing productivity; medium current ion implantation; nitrogen cooling gas; wafer clamp; Clamps; Cooling; Dielectrics; Electrodes; Electrostatic precipitators; Implants; Manufacturing; Production; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586283
Filename :
586283
Link To Document :
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