DocumentCode
309814
Title
An accurate and computationally efficient model for phosphorus implants into (100) single-crystal silicon
Author
Morris, S. ; Ghante, V. ; Lam, L.M. ; Yang, S.-H. ; Morris, M. ; Tasch, A.F. ; Kamenitsa, D. ; Sheng, J. ; Magee, C.
Author_Institution
Texas Univ., Austin, TX, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
563
Lastpage
566
Abstract
In this paper is reported the first comprehensive, computationally efficient and highly accurate model for predicting phosphorus depth profiles for implants into (100) single-crystal silicon with explicit dependence on energy, dose, and tilt and rotation (twist) angles. This model has been implemented into the widely used process simulators, SUPREM3, SUPREM4 and FLOOPS
Keywords
doping profiles; electronic engineering computing; elemental semiconductors; ion implantation; phosphorus; semiconductor process modelling; silicon; (100) single-crystal Si; FLOOPS; P depth profiles; P implants; SUPREM3; SUPREM4; Si:P; computationally efficient model; process simulators; Circuit simulation; Cities and towns; Computational modeling; Doping profiles; Fabrication; Implants; Parameter extraction; Predictive models; Semiconductor devices; Silicon devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586447
Filename
586447
Link To Document