Title :
Failure analysis of THz GaAs photoconductive antenna by means of high resolution X-ray topography
Author :
Qadri, Syed B. ; Wu, Dong Ho ; Graber, Benjamin D. ; Mahadik, N.A. ; Garzarella, A.
Author_Institution :
Code 6365, U.S. Naval Res. Lab., Washington, DC, USA
Abstract :
Time domain terahertz spectroscopy is currently being widely used for various applications. A photoconductive antenna, which is also known as Auston-switch, is popular choice to produce a wideband terahertz beam for the time domain terahertz spectrometer. The device consists of two gold micro-strips deposited on GaAs (001) substrate and is designed to produce a terahertz beam over broadband spectrum with a relatively high conversion efficiency. However the photoconductive antenna often experiences noticeable degradation and failure, especially when a high voltage bias is applied to it or when it is exposed to a strong laser beam whether the laser beam is a femto-second laser pulse to generate terahertz beam or from other lasers.
Keywords :
III-V semiconductors; X-ray topography; broadband antennas; electromigration; failure analysis; gallium arsenide; grain boundaries; laser beam applications; microstrip antennas; photoconducting devices; photoconductivity; terahertz spectroscopy; terahertz wave generation; Auston switch; GaAs photoconductive antenna; X-ray diffraction topography; electromigration; failure analysis; femto second laser beam; grain boundaries; microstrips; photocurrents; time domain terahertz spectroscopy; wideband terahertz beam generation; Antennas; Degradation; Laboratories; Laser beams; Surface topography; Time domain analysis; X-ray lasers;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135182
