Light-induced carriers in metal/porous silicon/p-Si structures

Author

Korcala, Andrzej ; Lukasiak, Zbigniew ; Zawadzka, Anna ; Plociennik, Przemyslaw ; Bala, Waclaw ; Bartkiewicz, Krzysztof

Author_Institution

Inst. of Phys., Nicolaus Copernicus Univ., Torun, Poland

fYear

2013

fDate

23-27 June 2013

Firstpage

1

Lastpage

3

Abstract

In this paper light-induced carriers in Al/PS/p-Si/Al structure are presented. Nyquist plots and admittance as a function of frequency and wavelengths were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. This diagnostic technique gives information about uncompensated conductance and capacitance of single and multilayer structures. Moreover we can find out structural properties of investigated material.

Keywords

aluminium; elemental semiconductors; metal-semiconductor-metal structures; multilayers; porous semiconductors; silicon; Al-Si-Si-Al; Nyquist plots; admittance spectroscopy; capacitance value; diagnostic technique; frequency function; light-induced carriers; metal-porous silicon-p-Si structures; multilayer structures; power tool; semiconductor materials; single structures; uncompensated conductance; Admittance; Capacitance; Frequency measurement; Silicon; Temperature measurement; Voltage measurement; Wavelength measurement; Admittance spectroscopy; Nyquist plots; Photoadmittance; Porous silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Transparent Optical Networks (ICTON), 2013 15th International Conference on

Conference_Location

Cartagena

ISSN

2161-2056

Type

conf

DOI

10.1109/ICTON.2013.6602903

Filename

6602903