Title :
Activation study of boron doped ion beam synthesised Si-Ge
Author :
Gwilliam, R.M. ; Curello, G. ; Sealy, B.J. ; Rodriguez, A. ; Botella, M.L. ; Rodriguez, T.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
Current IR sensor technology using SiGe layers on Si relies upon p + doping of the SiGe layers. Consistent with selected area device production, IBS has been used to form Si0.9Ge0.1 :B layers which were subsequently implanted with BF2 to levels of 1021 ions/cc. Using post-amorphisation techniques in conjunction with rapid thermal annealing at temperatures between 650 and 1050°C, carrier concentrations in excess of 5×1020 holes/cc have been achieved. In this paper, electrical results obtained by differential Hall effect and spreading resistance will be discussed in conjunction with structural studies using X-sectional TEM and ion channelling
Keywords :
Ge-Si alloys; Hall effect; amorphisation; boron; carrier density; channelling; electrical resistivity; ion implantation; rapid thermal annealing; semiconductor doping; semiconductor materials; transmission electron microscopy; 650 to 1050 C; BF2 ion implantation; IR sensor technology; Si0.9Ge0.1:B; amorphisation; boron p+ doping; carrier concentration; cross-sectional TEM; differential Hall effect; electrical activation; ion beam synthesis; ion channelling; rapid thermal annealing; selected area device; spreading resistance; structure; Boron; Doping; Germanium silicon alloys; Hall effect; Infrared sensors; Ion beams; Production; Rapid thermal annealing; Silicon germanium; Temperature;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586509
