Photoluminescence spectra of porous silicon modified by copper phthalocyanine coating

In this paper we present photoluminescence (PL) spectra of porous silicon (PSi) coated with thin top layer of copper phthalocyanine (CuPc). PSi was by electrochemical anodisation method prepared. CuPc based thin organic film was using physical vapor deposition (PVD) in high vacuum on the top of fresh PSi deposited. PL was under pulsed excitation measured and samples were in vacuum enclosed. PSi/CuPc samples exhibit strong photoluminescence in visible region at room temperature. Observed PL spectra exhibit multiband structure and such structure changes in red region compared to “clean” PSi. Properties of PSi/organic luminescence can be explained by penetration of organic material into PSi skeleton and interaction between carriers in PSi and deposited material.