DocumentCode
3098224
Title
Dispersion engineering in aluminum nitride phononic crystal plates
Author
Bongsang Kim ; Rakich, Peter T. ; Branch, Darren W. ; Clews, P. ; Nguyen, John ; Olsson, Roy H.
Author_Institution
Bosch Res. & Technol. Center, Palo Alto, CA, USA
fYear
2013
fDate
21-25 July 2013
Firstpage
721
Lastpage
724
Abstract
The dispersive properties of phononic crystals can be utilized to manipulate the phononic impedance of a material and to engineer the frequency-delay response of time domain signal processing circuits. In this paper we study, in both the frequency and time domains, the dispersive properties of phononic crystals formed in thin suspended plates of aluminum nitride.
Keywords
III-V semiconductors; aluminium compounds; phonon dispersion relations; phononic crystals; wide band gap semiconductors; AlN; aluminum nitride phononic crystal plates; aluminum nitride thin suspended plates; dispersion engineering; dispersive properties; frequency domain; frequency-delay response; material phononic impedance; time domain signal processing circuits; Crystals; Delays; Dispersion; III-V semiconductor materials; Impedance; Lattices; Transducers; Aluminum nitride; dispersion; phononic crystal plates;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2013 IEEE International
Conference_Location
Prague
ISSN
1948-5719
Print_ISBN
978-1-4673-5684-8
Type
conf
DOI
10.1109/ULTSYM.2013.0186
Filename
6725123
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