Compact modeling of silicon carbide lateral MOSFETs for extreme environment integrated circuits

Silicon carbide (SiC) based semiconductor devices have been gaining tremendous traction in the last decade due to the inherent material advantages [1]. While most of the efforts in developing SiC devices are focused on discrete power semiconductors, a team at GE GRC is developing SiC based integrated circuits that can be used in extremely high temperature applications such as geothermal drilling, aviation electronics, space exploration etc. [2] This ability of SiC is attributed to its low intrinsic carrier concentration, due to which SiC based devices have leakage currents that are several orders of magnitude lower than their Si counterparts under high ambient temperatures.