Title :
Selective nano-devices for the detection of nitroaromatic explosive compounds
Author :
Aluri, Geetha S. ; Motayed, Abhishek ; Davydov, Albert V. ; Oleshko, Vladimir ; Bertness, Kris A. ; Sanford, Norman A. ; Rao, Mulpuri V.
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
Abstract :
In recent years, there is an increased threat of explosive attacks worldwide, as the explosive - based weapons are easy to make, obtain and deploy. Detecting traces of explosives is a challenging task because of the low vapor pressures of most explosives [1]. Protecting against explosive-based terrorism can be achieved by large-scale production of nano-sensor arrays that are inexpensive, highly sensitive and selective with low response and recovery times. In the present study, we demonstrated the selective response of GaN nanowire/ TiO2 nanocluster hybrids to the nitroaromatic explosive, Trinitrotoluene at room temperature. The sensor detected between 0.5 ppb and 8 ppm TNT with good selectivity against interfering compounds like Toluene. The sensitivity of 1 ppm of TNT is ~10% with response and recovery times of ~30 s.
Keywords :
III-V semiconductors; chemical sensors; explosive detection; gallium compounds; nanosensors; nanowires; organic compounds; sensor arrays; terrorism; titanium compounds; weapons; wide band gap semiconductors; GaN-TiO2; explosive attack; explosive-based terrorism; explosive-based weapon; large scale production; low vapor pressure; nanocluster hybrids; nanodevice; nanosensor array; nanowire; nitroaromatic explosive compound detection; sensor detection; trace detection; trinitrotoluene; Explosives; Gallium nitride; Nanoscale devices; Semiconductor device measurement; Sensitivity; USA Councils;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135187