Effect of antenna structures on charging damage in PIII

Antenna structures are shown to enhance charging damage in MOSFET devices during Plasma Immersion Ion Implantation (PIII). The antenna structure increases the total charge per pulse induced on the floating gate oxide, enhancing the charge by up to several orders of magnitude. Using a coupled analytical model of the plasma, device structure and substrate bias, the dependence of the antenna structure on the induced charge per pulse is found. From the simulation, the phase space of antenna ratio and charge per pulse is mapped into three regions: no charging damage, device degradation, and oxide failure. Experimental results using three different antenna ratios (5 k:1, 11 k:1, 44 k:1) correlate well with simulation results