Title :
Effects of oblique wave propagation on the nonlinear plasma resonance in the two-dimensional channel of the Dyakonov-Shur detector
Author :
Rupper, Greg ; Rudin, Sergey ; Crowne, Frank J.
Author_Institution :
Army Res. Lab., Adelphi, MD, USA
Abstract :
The conduction channel of a semiconductor heterostructure high electron mobility transistor (HEMT) can act as a plasma wave resonator for density oscillations in quasi-two-dimensional (2D) electron gas. The plasma wave is an electron density excitation, possible at frequencies significantly higher than the cut-off frequency in a short channel device. The hydrodynamic model predicts a resonance response to electromagnetic radiation at the plasma oscillation frequency, which can be used for detection, mixing, and frequency multiplication in the terahertz range [1]. In particular, the hydrodynamic nonlinearities produce a constant source-to-drain voltage when gate-to-channel voltage has a time-harmonic component. In the Dyakonov-Shur detector a short channel HEMT is used for the resonant tunable detection of terahertz radiation. The non-linear plasma response has been observed in InGaAs [2,3] and GaN [4-6] HEMTs, in the frequency range from 0.2 to 2.5 THz.
Keywords :
III-V semiconductors; electron density; gallium arsenide; high electron mobility transistors; indium compounds; plasma oscillations; plasma waves; resonators; terahertz wave detectors; two-dimensional electron gas; wide band gap semiconductors; Dyakonov-Shur detector; GaN; InGaAs; conduction channel; density oscillations; electromagnetic radiation; electron density excitation; frequency 0.2 THz to 2.5 THz; frequency multiplication; gate-to-channel voltage; hydrodynamic model; hydrodynamic nonlinearities; mixing; nonlinear plasma resonance; oblique wave propagation; plasma oscillation frequency; plasma wave resonator; quasi2D electron gas; quasitwo-dimensional electron gas; resonance response; semiconductor HEMT; semiconductor heterostructure high-electron mobility transistor; short-channel HEMT; source-to-drain voltage; time-harmonic component; two-dimensional channel; Detectors; Electron mobility; HEMTs; Hydrodynamics; Logic gates; Plasma waves; Plasmas;
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
DOI :
10.1109/ISDRS.2011.6135189