DocumentCode :
3098363
Title :
Field emitters with carbon containing coverages and based on carbon fibers: possibilities of creation and use in microwave electronics
Author :
Sominski, G.G. ; Tumareva, T.A. ; Polyakov, A.S. ; Zabello, K.K.
Author_Institution :
St. Petersburg State Tech. Univ., Russia
fYear :
1999
fDate :
36373
Firstpage :
327
Lastpage :
330
Abstract :
High chemical inertness of carbon materials and their stability upon ion bombardment makes them attractive for vacuum microwave devices. However, high work function of carbon, as well as technological difficulties of pure coverage and ordered structure formation prevent the creation of carbon field emitters, Only few investigations are known where attempts to create emission sources made of carbon or carbon containing coverages were performed. The present work deals with field emitters covered with molecules of C60 and emitters made from carbon fibers. The results showed that the regularities of carbon containing coverage formation by means of fullerene molecule adsorption. The expediency to form a distributed structure consisting of the small microcluster was shown to give stable emission under acceptable voltages. The possibility to create a single tip emitter covered by carbon was discovered. Such an emitter with micron diameter secured a current of more than 100 μA under the operating voltage ~15 kV in static regime. The nonordered multi-tip field emitter based on carbon fiber was also realized
Keywords :
adsorbed layers; carbon fibres; cathodes; electron field emission; fullerenes; vacuum microelectronics; work function; 100 muA; 15 kV; C; C60; Fowler-Nordheim characteristics; carbon containing coverages; carbon fibers; distributed structure; emission sources; field electron emission; field emitters; fullerene molecule adsorption; nonordered multi-tip field emitter; single tip emitter; small microcluster; stable emission; vacuum microelectronics; work function; Carbon dioxide; Cathodes; Electron emission; Microwave devices; Organic materials; Surface treatment; Temperature; Tungsten; Vacuum technology; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics and Radiophysics of Ultra-High Frequencies, 1999. International University Conference Proceedings
Conference_Location :
St Petersburg
Print_ISBN :
5-7422-0083-8
Type :
conf
DOI :
10.1109/UHF.1999.787951
Filename :
787951
Link To Document :
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