• DocumentCode
    3098450
  • Title

    Characterizations of 980 nm aged pump laser by using electrical and optical noise for telecommunication systems

  • Author

    Asaad, Imad ; Orsal, Bernard ; Perez, Jean Philippe ; Alabedra, Robert ; Gelly, Gerard ; Bettiati, Mauro

  • Author_Institution
    Faculte de Genie Mecanique et Electrique, Univ. de Damas, Montpellier, France
  • fYear
    2004
  • fDate
    19-23 April 2004
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    The knowledge of the noise levels is important for pump laser diodes as it allows to study and to locate the noise sources and their origin. 980 nm fresh and aged pump laser have been characterized by using electrical and optical noise measurements. In this work, we present the electrical and optical noises at low - mid frequency for fresh pump laser diodes emitting at 980 nm (reference laser), and we study the parametric evolution and the defects generated in aged 980 nm single-mode ridge lasers, stressed during 400hrs at 50°C and high current injection (500 mA) (aged laser). The dynamic resistance, above threshold current, is not constant. It shows a proportionality of about Rd∝I-12/. The injection of the carriers is associated to space charge limited current effect (SCLC). The study of the electrical and optical noise which represents the fluctuations of intensity at low and medium frequency is very significant of degradation of the active layer. The spectra are dominated by 1/f (flicker) noise at very weak current. And at weak current, the current noise spectrale density (CNSD) at 10 Hz is dominated by I32/. The defect is associated with carrier transport controlled by the interfaces n+n- and p+p- and the trapping defect density near the n+n- and p+p- interfaces, also it due to pinching of the space charge limited current SCLC effect. An excess noise due to longitudinal mode hopping is related with output power fluctuations.
  • Keywords
    carrier density; current density; electric noise measurement; flicker noise; laser noise; semiconductor device noise; semiconductor lasers; space charge; space-charge limited devices; 10 Hz; 980 nm; aged pump laser diode characterization; carrier injection; carrier transport control; current injection; current noise spectral density; defect density trapping; dynamic resistance; electrical optical noise measurement; flicker noise; laser diode emission; longitudinal mode hopping; low - mid frequency; noise source; output power fluctuation; single-mode ridge laser; space charge limited current effect; telecommunication system; threshold current; Aging; Diode lasers; Fluctuations; Frequency; Laser excitation; Laser noise; Noise level; Optical noise; Pump lasers; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Information and Communication Technologies: From Theory to Applications, 2004. Proceedings. 2004 International Conference on
  • Print_ISBN
    0-7803-8482-2
  • Type

    conf

  • DOI
    10.1109/ICTTA.2004.1307677
  • Filename
    1307677