One-flux theory of saturated drain current in nanoscale transistors

Since M. Lunstrom´s seminal publication in 1997 [1], a large number of publications have appeared attempting to model in compact form the drain current and the backscattering coefficient in silicon MOSFETs. However, very few papers have critically examined the derivation and the explicit expression of I_D itself, until a recent analysis by Giusi et al. [2]. In this work, we derive an alternate expression of saturated drain current I_{D, sat} along the line of the one-flux theory of McKelvey et al. [3] based on multiple reflections of carriers at the virtual source (VS).