• DocumentCode
    3098524
  • Title

    High resolution electromigration measurements for reduction of the test time

  • Author

    De Keukeleire, Catherine ; Tielemans, Luc ; De Pauw, Piet

  • Author_Institution
    Destin N.V., Diepenbeek, Belgium
  • fYear
    1997
  • fDate
    13-16 Oct 1997
  • Firstpage
    80
  • Lastpage
    85
  • Abstract
    This paper presents a faster method to assess the electromigration performance of metal tracks. The method is based on high accuracy measurements (in the PPM range) which allow monitoring of resistance variations in NIST metal tracks. It is shown that, due to the high accuracy, differences in degradation can be observed after a relatively short stress time and the failure criterion for time-to-failure (TTF) can be decreased. By decreasing the failure criterion for resistance changes from the typical range of 20 to 30% to a range of 1 to 5%, electromigration test time can be reduced by a factor of four. It was also shown that reducing the failure criterion has no impact on the determined values of thermal activation energy E, and current acceleration factor n. Finally, a new strategy is proposed: by using a 1% failure criterion for determination of Ea and n (at 3 temperatures and 3 current densities) and a 30% failure criterion for determination of the cumulative failure curve (1 temperature and 1 current density), the total test time duration can be reduced by a factor of four and provides the same information than a conventional electromigration test
  • Keywords
    current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; NIST metal tracks; cumulative failure curve; current acceleration factor; electromigration measurements; electromigration performance; electromigration test; electromigration test time; failure criterion; measurement resolution; metal track degradation; metal tracks; resistance variations; stress time; temperature; test time duration; test time reduction; thermal activation energy; time-to-failure; Condition monitoring; Current density; Degradation; Electrical resistance measurement; Electromigration; NIST; Stress; Temperature; Testing; Thermal factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1997 IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-4205-4
  • Type

    conf

  • DOI
    10.1109/IRWS.1997.660292
  • Filename
    660292