Title :
High resolution electromigration measurements for reduction of the test time
Author :
De Keukeleire, Catherine ; Tielemans, Luc ; De Pauw, Piet
Author_Institution :
Destin N.V., Diepenbeek, Belgium
Abstract :
This paper presents a faster method to assess the electromigration performance of metal tracks. The method is based on high accuracy measurements (in the PPM range) which allow monitoring of resistance variations in NIST metal tracks. It is shown that, due to the high accuracy, differences in degradation can be observed after a relatively short stress time and the failure criterion for time-to-failure (TTF) can be decreased. By decreasing the failure criterion for resistance changes from the typical range of 20 to 30% to a range of 1 to 5%, electromigration test time can be reduced by a factor of four. It was also shown that reducing the failure criterion has no impact on the determined values of thermal activation energy E, and current acceleration factor n. Finally, a new strategy is proposed: by using a 1% failure criterion for determination of Ea and n (at 3 temperatures and 3 current densities) and a 30% failure criterion for determination of the cumulative failure curve (1 temperature and 1 current density), the total test time duration can be reduced by a factor of four and provides the same information than a conventional electromigration test
Keywords :
current density; electromigration; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; NIST metal tracks; cumulative failure curve; current acceleration factor; electromigration measurements; electromigration performance; electromigration test; electromigration test time; failure criterion; measurement resolution; metal track degradation; metal tracks; resistance variations; stress time; temperature; test time duration; test time reduction; thermal activation energy; time-to-failure; Condition monitoring; Current density; Degradation; Electrical resistance measurement; Electromigration; NIST; Stress; Temperature; Testing; Thermal factors;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1997 IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4205-4
DOI :
10.1109/IRWS.1997.660292