Physics-based, closed-form DC model for lightly-doped short channel triple-gate MOSFETs including three-dimensional effects

Author

Kloes, Alexander ; Schwarz, Mike ; Holtij, Thomas

Author_Institution

Competence Center for Nanotechnol. & Photonics, Tech. Hochschule Mittelhessen, Giessen, Germany

fYear

2011

fDate

7-9 Dec. 2011

Firstpage

1

Lastpage

2

Abstract

In this paper, we present a compact DC model for lightly-doped, short-channel SOI triple-gate MOSFETs, which is based on an analytical solution of 3D Poisson´s equation by the conformal mapping technique. Model parameters will be discussed in relation to structural and technological parameters of real devices. No fitting parameters are introduced for modeling of three-dimensional effects on the device´s electrostatics, model parameters are only given by device structure. The model is in very good agreement with measurements down to 60nm and TCAD with 20nm effective channel length.

Keywords

MOSFET; Poisson equation; conformal mapping; electrostatics; semiconductor device models; silicon-on-insulator; technology CAD (electronics); 3D Poisson equation; TCAD; closed-form DC model; compact DC model; conformal mapping technique; device electrostatics; device structural parameter; device technological parameter; lightly-doped short-channel triple-gate MOSFET; model parameters; physics-based DC model; size 20 nm; three-dimensional effects; Analytical models; Electric potential; Fitting; MOSFETs; Mathematical model; Solid modeling; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Device Research Symposium (ISDRS), 2011 International

Conference_Location

College Park, MD

Print_ISBN

978-1-4577-1755-0

Type

conf

DOI

10.1109/ISDRS.2011.6135202

Filename

6135202