• DocumentCode
    3098766
  • Title

    Thin film transistors with buckled gate

  • Author

    Sambandan, Sanjiv

  • Author_Institution
    Dept. of Instrum. & Appl. Phys., Indian Inst. of Sci., Bangalore, India
  • fYear
    2011
  • fDate
    7-9 Dec. 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Thin film transistors (TFTs) based on non-crystalline semiconductors are of interest for large area electronics [1]. On flexible substrates, there exists a possibility of the gate buckling so as to create corrugations between source and drain. We study the influence of corrugating the gate on the transfer characteristics of the TFT.
  • Keywords
    thin film transistors; flexible substrates; gate buckling; noncrystalline semiconductors; thin film transistors; transfer characteristics; Capacitance; Electric fields; Electric potential; Electrodes; Leakage current; Logic gates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium (ISDRS), 2011 International
  • Conference_Location
    College Park, MD
  • Print_ISBN
    978-1-4577-1755-0
  • Type

    conf

  • DOI
    10.1109/ISDRS.2011.6135214
  • Filename
    6135214
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3098766