DocumentCode :
3098791
Title :
Pd-InGaAs as a new self-aligned contact material on InGaAs
Author :
Kong, Eugene Y -J ; Zhang, Xingui ; Ivana ; Zhou, Qian ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
fYear :
2011
fDate :
7-9 Dec. 2011
Firstpage :
1
Lastpage :
2
Abstract :
Introduction. Self-alignment of source/drain (S/D) contacts to the transistor gate is important, as it brings the S/D contacts close to the channel and allows the achievement of low parasitic S/D series resistance RSD. Low RSD is needed for high-mobility and short-channel transistors where the channel resistance is low and external resistance is a significant proportion of the total resistance between source and drain. Fig. 1 illustrates the self-aligned S/D contact metallization process for InGaAs transistors. Recently, the first self-aligned Ni-InGaAs S/D contacts were demonstrated.1, 2 In this work, Pd-InGaAs is explored as a new self-aligned contact metallization technology.
Keywords :
III-V semiconductors; MOSFET; electric resistance; gallium arsenide; indium compounds; metallisation; palladium; semiconductor-metal boundaries; Pd-InGaAs; channel resistance; high-mobility transistor; parasitic S-D series resistance; selfaligned S-D contact metallization process; selfaligned contact material; short-channel transistor; source-drain contact; transistor gate; Annealing; Films; Indium gallium arsenide; Metals; Resistance; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium (ISDRS), 2011 International
Conference_Location :
College Park, MD
Print_ISBN :
978-1-4577-1755-0
Type :
conf
DOI :
10.1109/ISDRS.2011.6135216
Filename :
6135216
Link To Document :
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