Simulation and effects of phase signal leakage in an improved Kahn based modulator for a high efficiency power amplifier

This paper presents a simulation related to phase signal leakage in an improved Kahn based modulator for a high efficiency power amplifier. It contains a mathematical modeling of a leaked phase signal, an EVM simulation versus leakage, and a validation of the simulation method through comparison with measurement results. These are done using a LTE signal which has a bandwidth of 10 MHz, a PAPR of 9.9 dB, and a carrier frequency of 2.6 GHz for a modulator with a 3-level LPDSM. The difference between simulated and measured percent EVM is less than 0.2 %p. It is also shown that a leakage value L can be estimated from characteristics of a mixer and a LPDSM. And effects of phase signal leakage on efficiency of a power amplifier are discussed.